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ada-4789 silicon bipolar darlington amplifer data sheet features ? small signal gain amplifer ? operating frequency: dc C 2.5 ghz ? unconditionally stable ? 50 ohms input & output ? flat, broadband frequency response up to 1 ghz ? operating current: 40 C 80 ma ? industry standard sot-89 package ? single supply ? vswr < 2 throughput operating frequency specifcations 900mhz, 3.80v, 60ma (typical) ? 16.50 db associated gain ? 17.10 dbm p1db ? 32.60 dbm oip3 ? 4.20 db noise figure 900mhz, 4.10v, 80ma (typical) ? 16.90 db associated gain ? 18.80 dbm p1db ? 33.20 dbm oip3 ? 4.30 db noise figure applications ? cellular/pcs/wll base stations ? wireless data/wlan ? fiber-optic systems ? ism description avago technologies ada-4789 is an economical, easy- to-use, general purpose silicon bipolar rfic gain block amplifers housed in sot-89 surface mount plastic pack - age. the darlington feedback structure provides inherent broad bandwidth performance, resulting in useful oper - ating frequency up to 2.5 ghz. this is an ideal device for small-signal gain cascades or if amplifcation. ada-4789 is fabricated using avagos hp25 silicon bi - polar process, which employs a double-difused single poly-silicon process with self-aligned submicron emitter geometry. the process is capable of simultaneous high ft and high npn breakdown (25 ghz ft at 6v bvceo). the process utilizes industry standard device oxide isola - tion technologies and submicron aluminum multi-layer inter-connects to achieve superior performance, high uniformity, and proven reliability. package marking and pin connections note: package marking provides orientation and identifcation 4g = device code x = month code indicates the month of manufacture 4gx top view rfin gnd rfout #1 #2 #3 bottom view rfout gnd rfin #3 #2 #1
2 c block c block c bypass r c v cc = 5 v v d = 3.8 v rfc rf input rf output 3tx r c = v cc - v d i d typical biasing confguration notes: 1. typical value determined from a sample size of 500 parts from 3 wafers. 2. measurement obtained using production test board described in the block diagram below. 3. i) 100 mhz oip3 test condition: f1 = 100 mhz, f2 = 105 mhz, pin = -20 dbm per tone. ii)900 mhz oip3 test condition: f1 = 900 mhz, f2 = 905 mhz, pin = -20 dbm per tone. iii) 2000 mhz oip3 test condition: f1 = 2000 mhz, f2 = 2005 mhz, pin = -20 dbm per tone. table 2. electrical specifcations at tc = +25c symbol parameter unit maxrating i d device current ma 90 p diss total power dissipation [2] mw 370 p in max rf input power dbm 20 t j junction temperature 0 c 150 t stg storage temperature 0 c -65 to 150 q jc thermal resistance [3] 0 c/w 50 symbol parameter and test condition:id = 60ma, zo = 50 w frequency units min. typ. max. v d device voltage v 3.3 3.8 4.3 g p power gain 100 mhz 900 mhz [1,2] 2.0 ghz db 15 16.9 16.5 16.2 18 g p gain flatness 100 to 900 mhz 0.1 to 2.0 ghz db 0.3 0.5 f3db 3db bandwidth ghz 4 vswr in input voltage standing wave ratio 0.1 to 4.0 ghz 1.3:1 vswr out output voltage standing wave ratio 0.1 to 4.0 ghz 1.5:1 nf 50 w noise figure 100 mhz 900 mhz [1,2] 2.0 ghz db 4.1 4.2 4.4 p1db output power at 1db gain compression 100 mhz 900 mhz [1,2] 2.0 ghz dbm 16.0 17.7 17.1 16.2 oip3 output third order intercept point 100 mhz [3] 900 mhz [1,2,3] 2.0 ghz [3] dbm 27 33.4 32.6 28.8 dv/dt device voltage temperature coefcient mv/ 0 c -4.9 table 1. absolute maximum ratings [1] at tc = +25c notes: 1. operation in excess of any one of these conditions may result in permanent damage to the device. 2. ground lead temperature is 25c. derate 20 mw/c for tc > 131.5 c. 3. thermal resistance is measured from junction to board using ir method.
3 table 3. typical electrical performance at tc = +25c, id=80ma, zo= 50 w notes: 1. typical value determined from a sample size of 200 parts from 2 wafers. 2. measurement obtained using production test board described in the block diagram below. 3 i) 100 mhz oip3 test condition: f1 = 100 mhz, f2 = 105 mhz, pin = -20 dbm per tone. ii) 900 mhz oip3 test condition: f1 = 900 mhz, f2 = 905 mhz, pin = -20 dbm per tone. iii) 2000 mhz oip3 test condition: f1 = 2000 mhz, f2 = 2005 mhz, pin = -20 dbm per tone. symbol parameter and test condition: frequency units min. typ. max. vd device voltage v 4.1 gp power gain 100 mhz 900 mhz [1,2] 2.0 ghz db 17.1 16.9 16.3 nf 50 w noise figure 100 mhz 900 mhz [1,2] 2.0 ghz db 4.1 4.3 4.5 p1db output power at 1db gain compression 100 mhz 900 mhz [1,2] 2.0 ghz dbm 19.3 18.8 16.9 oip3 output third order intercept point 100 mhz [3] 900 mhz [1,2,3] 2.0 ghz [3] dbm 35.4 33.2 29 input 50 ohm t ransmission (0.5 db loss) dut 50 ohm t ransmission including bias (0.5 db loss) output block diagram block diagram of 900 mhz production test board used for vd, gain, p1db, oip3, and nf measurements show in table 2 & 3. circuit losses have been de-embedded from actual measurement.
4 typical performance curve (at tc=25c, unless specifed otherwise) figure 5. gain vs frequency at id = 60 ma. figure 6. p1db vs frequency at id = 60 ma. notes: 1. statistics distribution determined from a sample size of 500 parts taken from 3 diferent wafers. 2. future wafers allocated to this product may have typical values anywhere between the minimum and maximum specifcation limits. product consistency distribution charts at 900 mhz, id=60ma figure 1. vd distribution@60ma. lsl=3.3v, nominal=3.8v, usl=4.3v figure 2. gain distribution@60ma. lsl=15 db, nominal=16.5 db, usl=18 db figure 3. p1db distribution@60ma lsl=16.0 dbm, nominal=17.1dbm figure 4. oip3 distribution@60ma. lsl=27 dbm, nominal=32.6 dbm 0 5 10 15 20 0 1 2 3 4 5 6 frequency (ghz) gain (db) 0 5 10 15 20 0 1 2 3 4 5 6 frequency (ghz) p1db (dbm)
5 10 15 20 25 30 35 0 1 2 3 4 5 6 frequency (ghz) oip3 (dbm) 2 3 4 5 6 0 1 2 3 4 5 6 frequency (ghz) nf (db) 0 10 20 30 40 50 60 70 80 90 0 1 2 3 4 5 vd (v) id (ma) -40c 25c 85c 14.0 14.5 15.0 15.5 16.0 16.5 17.0 0 20 40 60 80 100 id (ma) gain (db) -40c 25c 85c 0 2 4 6 8 10 12 14 16 18 20 0 0.02 0.04 0.06 0.08 0.1 id (ma) p1db (db) -40c 25c 85c 0 5 10 15 20 25 30 35 40 0 20 40 60 80 100 id (ma) oip3 (dbm) -40c 25c 85c figure 7. oip3 vs frequency at id = 60 ma. figure 8. nf vs frequency at id = 60 ma. figure 9. id vs. vd and temperature. figure 10. gain vs. id and temperature at 900 mhz. figure 11. p1db vs. id and temperature at 900 mhz. figure 12. oip3 vs. id and temperature at 900 mhz.
6 0 1 2 3 4 5 6 0 20 40 60 80 100 id (ma) nf (db) -40c 25c 85c 9 10 11 12 13 14 15 16 17 18 0 20 40 60 80 100 id (ma) gain (db) 6 5 0.1 0.9 4 3 2 1.5 0 5 10 15 20 0 20 40 60 80 100 id (ma) p1db (dbm) 6 5 4 3 2 1.5 0.1 0.9 10 15 20 25 30 35 40 0 20 40 60 80 100 id (ma) oip3 (dbm) 6 5 4 3 2 1.5 0.9 0.1 3.5 4 4.5 5 5.5 6 0 20 40 60 80 100 id (ma) nf (db) 6 5 4 3 1.5 0.1 0.9 2 -25 -20 -15 -10 -5 0 0 2 4 6 8 10 12 frequency (ghz) irl (db) id=50ma id=60ma id=80ma figure 17. nf vs id and frequency (ghz). figure 18. input return loss vs id and frequency. figure 13. nf vs. id and temperature at 900 mhz. figure 14. gain vs id and frequency (ghz). figure 15. p1db vs id and frequency (ghz). figure 16. oip3 vs id and frequency (ghz).
7 -25 -20 -15 -10 -5 0 0 2 4 6 8 10 12 frequency (ghz) orl (db) id=50ma id=60ma id=80ma 0 5 10 15 20 0 1 2 3 4 5 6 frequency (ghz) gain (db) 0 5 10 15 20 0 1 2 3 4 5 6 frequency (ghz) p1db (dbm) 10 15 20 25 30 35 40 0 1 2 3 4 5 6 frequency (ghz) oip3 (dbm) 2 3 4 5 6 0 1 2 3 4 5 6 frequency (ghz) nf (db) figure 19. output return loss vs id and frequency. figure 20. gain vs frequency at id = 80 ma figure 21. p1db vs frequency at id = 80 ma figure 22. oip3 vs frequency at id = 80 ma figure 23. nf vs frequency at id = 80 ma
8 notes: s parameters are measured on a micro-strip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the rfin lead. the output reference plane is at the end of the rfout lead. typical scattering parameters at 25c, id = 50ma freq. ghz s11 s21 s12 s22 mag. ang. db mag. ang. mag. ang. mag. ang. 0.1 0.168 3.0 16.469 6.660 171.3 0.099 -0.2 0.168 -8.4 0.5 0.110 -12.5 16.213 6.466 164.0 0.098 -7.0 0.188 -28.0 0.9 0.087 -50.0 16.182 6.443 144.7 0.094 -14.4 0.157 -72.9 1.0 0.083 -60.1 16.172 6.436 140.0 0.092 -19.2 0149 -84.4 1.9 0.093 -155.0 15.741 6.124 107.1 0.085 -26.3 0.218 -110.7 2.0 0.103 -144.8 15695 6.092 103.4 0.084 -27.1 0.226 -114.1 2.5 0.095 176.1 15.528 5.976 84.8 0.084 -31.3 0.292 -146.6 3.0 0.114 144.7 15.362 5.863 66.0 0.085 -35.4 0.358 181.0 3.5 0.154 123.7 15.199 5.754 47.4 0.087 -39.4 0.422 149.3 4.0 0.196 106.1 15.035 5.646 28.7 0.088 -43.6 0.486 115.4 4.5 0.246 98.3 14.357 5.222 9.2 0.086 -49.3 0.559 100.4 5.0 0.344 85.8 13.120 4.529 -11.0 0.084 -56.4 06.29 87.6 5.5 0.405 74.7 11.925 3.947 -31.4 0.083 -64.8 0.669 73.2 6.0 0.489 61.4 10.243 3.252 -50.4 0.080 -72.9 0.700 59.1 6.5 0.540 52.2 9.030 2.828 -67.1 0.076 -79.7 0.732 47.9 7.0 0.582 44.3 7.854 2.470 -82.5 0.071 -86.8 0.764 37.3 7.5 0.625 36.5 6.477 2.108 -97.9 0.067 -93.6 0.794 26.6 8.0 0.667 28.5 4.851 1.748 -113.2 0.061 -100.6 0.827 16.0 8.5 0.696 23.7 3.027 1.417 -122.2 0.055 -104.6 0.827 12.5 9.0 0.728 18.8 0.725 1.087 228.9 0.049 251.6 0.826 9.2 9.5 0.737 13.2 -0.715 0.921 221.1 0.046 245.4 0.816 6.2 10.0 0.738 9.9 -1.809 0.812 -148.1 0.045 238.0 0.797 1.8
9 notes: s parameters are measured on a micro-strip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the rfin lead. the output reference plane is at the end of the rfout lead. typical scattering parameters at 25c, id = 60ma freq. ghz s11 s21 s12 s22 mag. ang. db mag. ang. mag. ang. mag. ang. 0.1 0.160 3.1 16.586 6.750 171.3 0.099 -0.2 0.160 -8.5 0.5 0.110 -6.1 16.325 6.550 164.1 0.098 -6.9 0.180 -30.7 0.9 0.087 -44.2 16.292 6.525 144.8 0.093 -14.2 0.150 -75.4 1.0 0.081 -54.5 16.284 6.519 140.0 0.092 -19.1 0.143 -86.6 1.9 0.089 -151.3 15.855 6.205 107.1 0.084 -26.3 0.212 -112.3 2.0 0.097 -142.1 15.806 6.170 103.4 0.083 -27.1 0.220 -115.2 2.5 0.090 178.3 15.639 6.053 84.7 0.084 -31.2 0.287 -147.7 3.0 0.109 146.7 15.471 5.937 66.0 0.085 -35.3 0.353 179.8 3.5 0.149 126.8 15.298 5.820 47.4 0.086 -39.3 0.420 147.3 4.0 0.198 110.5 15.122 5.703 28.7 0.087 -43.4 0.487 114.7 4.5 0.253 97.5 14.441 5.273 9.3 0.085 -49.1 0.560 100.2 5.0 0.350 85.3 13.217 4.580 -10.9 0.083 -56.2 0.630 87.5 5.5 0.410 74.5 12.019 3.990 -31.3 0.082 -64.6 0.670 73.2 6.0 0.493 61.0 10.344 3.290 -50.2 0.080 -72.3 0.703 59.2 6.5 0.544 52.0 9.124 2.859 -66.9 0.075 -79.3 0.735 47.9 7.0 0.586 44.1 7.945 2.496 -82.3 0.070 -86.2 0.767 37.3 7.5 0.628 36.2 6.580 2.133 -97.6 0.066 -93.1 0.798 26.6 8.0 0.670 28.3 4.959 1.770 -113.0 0.061 -100.0 0.830 16.0 8.5 0.700 23.5 3.317 1.435 -122.0 0.055 -104.0 0.830 12.6 9.0 0.730 18.6 0.828 1.100 229.1 0.049 252.0 0.830 9.2 9.5 0.740 13.1 -0.630 0.930 221.4 0.046 246.0 0.820 6.2 10.0 0.740 9.7 -1.724 0.820 -147.8 0.045 238.6 0.800 1.7
10 notes: s parameters are measured on a micro-strip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the rfin lead. the output reference plane is at the end of the rfout lead. typical scattering parameters at 25c, id = 80ma freq. ghz s11 s21 s12 s22 mag. ang. db mag. ang. mag. ang. mag. ang. 0.1 0.151 3.1 16.716 6.852 171.3 0.098 -0.2 0.150 -8.5 0.5 0.112 1.1 16.45 6.645 164.1 0.097 -6.8 0.171 -34.4 0.9 0.087 -37.7 16.416 6.619 144.7 0.092 -14.2 0.142 -78.4 1.0 0.081 -48.0 16.408 6.613 140.0 0.091 -18.9 0.135 -89.3 1.9 0.086 -147.0 15.980 6.295 107.0 0.084 -26.1 0.204 -114.1 2.0 0.093 -138.8 15.931 6.260 103.3 0.083 -27.0 0.212 -116.3 2.5 0.085 181.0 15.768 6.143 84.6 0.083 -31.0 0.279 -148.7 3.0 0.104 148.5 15.596 6.023 65.8 0.084 -35.1 0.347 178.6 3.5 0.145 129.5 15.414 5.898 47.2 0.085 -39.2 0.417 144.7 4.0 0.199 114.6 15.227 5.772 28.5 0.086 -43.2 0.487 113.6 4.5 0.259 98.5 14.543 5.335 9.0 0.084 -48.8 0.562 99.6 5.0 0.356 85.3 13.319 4.634 -11.2 0.083 -55.9 0.630 87.1 5.5 0.417 74.4 12.108 4.031 -31.6 0.081 -64.1 0.670 73.0 6.0 0.500 60.9 10.428 3.322 -50.6 0.079 -72.1 0.702 59.0 6.5 0.551 51.8 9.191 2.881 -67.2 0.075 -78.7 0.735 47.8 7.0 0.592 43.9 8.000 2.512 -82.6 0.070 -85.6 0.767 37.1 7.5 0.634 36.0 6.629 2.145 -97.9 0.066 -92.6 0.798 26.5 8.0 0.674 28.0 4.994 1.777 -113.2 0.060 -99.6 0.830 15.9 8.5 0.705 23.3 3.161 1.439 -122.1 0.054 -103.5 0.830 12.5 9.0 0.733 18.4 0.844 1.102 229.0 0.049 252.9 0.830 9.1 9.5 0.743 12.9 -.0.602 0.933 221.4 0.046 -113.4 0.820 6.2 10.0 0.744 9.6 -1.713 0.821 -147.7 0.045 239.1 0.800 1.6
11 sot89 package dimensions dimensions in mm dimensions in inches symbols minimum nominal maximum minimum nominal maximum a 1.40 1.50 1.60 0.055 0.059 0.063 l 0.89 1.04 1.20 0.0350 0.041 0.047 b 0.36 0.42 0.48 0.014 0.016 0.018 b1 0.41 0.47 0.53 0.016 0.018 0.030 c 0.38 0.40 0.43 0.014 0.015 0.017 d 4.40 4.50 4.60 0.173 0.177 0.181 d1 1.40 1.60 1.75 0.055 0.062 0.069 d2 1.45 1.65 1.80 0.055 0.062 0.069 e 3.94 - 4.25 0.155 - 0.167 e1 2.40 2.50 2.60 0.094 0.098 0.102 e1 2.90 3.00 3.10 0.114 0.118 0.122 s 0.65 0.75 0.85 0.026 0.030 0.034 e 1.40 1.50 1.60 0.054 0.059 0.063 matte finish polish polish d d1 e1 e l b e e1 s c b1 b a or d2 d1 1.24 1.23 0.77 b1 0.2 half etching 1.625 2.35 depth 0.100 e d d1 e1 e l e e1 s or part number ordering information part number no of devices container ada-4789-blkg 100 7 tape/reel ada-4789-tr1g 3000 13 tape/reel
12 device orientation tape dimensions dimensions in mm notes: 1. 10 sprocket hole pitch cumulative tolerance 0.2 2. camber in compliance with eia 481 3. pocket position relative to sprocket hole measured as true position of pocket, not pocket hole 12.0 .3 ao = 4.60 bo = 4.90 ko = 1.90 5.50 .05 see note 3 1.75 .10 8.00 ? 1.5 +0.1/-0.0 2.00 .05 see note 3 4.00 see note 1 section a - a ? 1.50 min. ao ko r 0.3 typ. r 0.3 max. 0.30 .05 a a bo user feed direction cover tape carrier tape reel 4gx 4gx 4gx 4gx
for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. data subject to change. copyright ? 2005-2013 avago technologies. all rights reserved. obsoletes av01-0295en av02-0052en - november 11, 2013 ? 20.2 m i n 2.0 0.5 ? 13.0 +0.5 -0.2 102.0 ref 330.0 ref 8.4 (measured at hub) (measured at hub) "a" attention electrostatic sensitive devices safe handling required minneapolis usa u.s pat 4726534 r lokreel r 11.1 max. detail "a" detail "b" ps 6 6 p s 1.5 88 ref 96.5 +0.3 - 0.2 dimensions in mm reel dimensions C 13 reel

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